SOD(Spin-on Dielectrics)

Spin-on Shallow Trench Isolation

Developed for void-free gap fill of shallow trench isolation structures.

Applications

At future technology nodes (≤65nm), CVD films are increasingly challenged to produce void-free gap fill due to the narrower features and high aspect ratios.  Dow Corning®  Spin-on Shallow Trench Isolation (STI) reduces the effective aspect ratio allowing the creation of void-free STI structures.

Features

• Spin-on dielectric
• Properties similar to SiO2
• Semiconductor-grade, low-metals (<10 ppb) material

Benefits

• Void free gap fill for high aspect ration STI structures
• Customizable material thickness characteristics for varied needs
• Technology node extendable with gap fill capabilities to <20nm

How to Use

Dow Corning Spin-on STI is applied in a single coat using standard spin-on dielectric equipment. It can be spin-coated under a wide range of conditions to optimize uniformity on complex geometries.

After spin-coating, hot plates are used to remove solvent and flow the film. The flow properties of the material help to provide superior smoothing and gap fill.

After flow, the film is cured in a standard quartz diffusion furnace.  Curing may be carried out in oxidative(e.g., steam), inert (e.g., N2), or other environments, depending on customer needs. For more  information, contact your local Dow Corning sales representative.

After curing, the film is ready for the next processing step. No etchback is required, but if desired may be accomplished via standard etching chemistries.

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